2N5202 DATASHEET PDF

Rugged Series devices are identified by the suffix letter R following the type number. Consult factory for availability. Higher voltages available— contact Harris Semiconductor Power Marketing. Address latched, Keypad Interface, Printer Interface.

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Current limiting in this circuit is accomplished by sensing current in the primary line and resetting the soft-start circuit. Hermetic Seal Tests 5. Average power dissipation of transients not to exceed 2. Levels of reliability are defined by MIL-S Holding Current Ih — Minimum on state current that will hold the surgector in the on state after it has been latched on.

Includes latches, interface and brightness control. Unidirectional — Handles positive OR negative 25n transient waveforms. The difference between a Diode datashset a Rectifier is that a Rectifier is usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0. These current feedback amplifiers deliver nearly equal bandwidth over a wide range of gains. Operation at Collector Current up to 20 amps and supply voltages ranging from 40 to volts Datzsheet E as a recognized component.

Datawheet Analog Switch will pass or block an analog signal. High drive, to meet specified bus-interface 2n for clock and data lines 3. Function Selection Chart Continued No. Used if more than one electrical option Is available. Harris H j Family: Harris now offers its customers the convenient tape and reel style packaging. Can be used for delay times in excess of several days. The protection afforded rary upset due to transient voltages of lower amplitudes.

A rectifier allows current flow in one direction datahseet. Anti-log amplifiers do the inverse. FindLay, Ohio; Mountaintop, Pennsylvania; Somerville, New Jersey; Dundalk, Ireland; Singapore; Kuala Lumpur, Malaysia Semiconductor Products Division designs, manufactures, and markets discrete semiconductors and analog, digital, datashee mixed-signal integrated circuits for signal -processing and power-control applications for both commercial and military uses.

IcU 75 3. Measure in dB as the ratio of sum of the power of all harmonics to the power of the fundamental. Does not have the large supply current transients of the bipolar and does not require the large bypassing capacitors needed by the Devices must be ordered in multiples ol quantities listed below. Custom amplifier design, bandgap circuits, translinear circuits and more.

We use advanced technologies to provide innovative and cost-effective solutions to our commercial and government customers in more than countries, and we are committed to providing products, systems, and services of the highest quality. Determines accuracy of held voltage Drift Current: These are n-channel enhancement mode polysilicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Slew rate may be specified separately for both positive and negative going changes. TOP Related.

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2N5202 DATASHEET PDF

Current limiting in this circuit is accomplished by sensing current in the primary line and resetting the soft-start circuit. Hermetic Seal Tests 5. Average power dissipation of transients not to exceed 2. Levels of reliability are defined by MIL-S Holding Current Ih — Minimum on state current that will hold the surgector in the on state after it has been latched on. Includes latches, interface and brightness control. Unidirectional — Handles positive OR negative 25n transient waveforms. The difference between a Diode datashset a Rectifier is that a Rectifier is usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0.

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2N5202 Datasheet

A white dot will indicate location of Pin 1. Very high speed Temperature 2: Also, custom and standard application-specific ICs for military, communication, and automotive applications. AU9 c O 7iKn Z. Enhanced replacement for the AD at a lower cost.

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The maximum amount of current that could flow through the Collector pin is mA, hence we cannot connect loads that consume more than mA using this transistor. To bias a transistor we have to supply current to base pin, this current IB should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV. But there are two important features that distinguish both.

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